Optical And Electrical Characterization Of Sio2 Films Obtained By Atmospheric Pressure Chemical Vapor Deposition

SiO2 films by atmospheric pressure chemical vapor deposition (APCVD) process, using tetraethoxysilane (TEOS) and ozone (O-3) as reactant were obtained. The films were deposited on silicon substrates at various temperatures 125, 150, 175, 200, 225 and 250 degrees C Fourier transforms infrared (FTIR) spectroscopy was used to characterize the SiO2 films. Absorbance spectrums show the vibration modes corresponding to SiO2 films. Additional absorption bands due to residual groups were also observed, but they were found to be dependent on the deposition temperature. The observed current flowing through the oxide could be related to these residual groups, mainly to hydroxyl groups. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.