Hydrogen-Controlled Crystallinity of 3C-SiC Film on Si(001) Grown with Monomethylsilane

Heteroepitaxial growth of 3C-SiC has been conducted on Si(001) substrate using monomethylsilane as a single source gas. By evaluating the crystalliniy of the film as a function of the growth temperature T and pressure P, a process window for a good epitaxy has been obtained, which is expressed as P-cl (T) < P < P-c2(T). Both of the two critical pressures increase with T, and are both successfully expressed with a single analytical function derived from the hydrogen adsorption/desorption balance on the surface.