SiGe的BiCOMS技术的S波段低噪声放大器的设计
Modern Radar（2012）
Abstract
文中介绍了一种基于锗硅BICMOS的宽带低噪声放大器的设计.此放大器工作在2.7 GHz ～ 3.5 GHz的频带,采用0.18 μm的锗硅工艺和cascode结构来增加其反向隔离度,并且使用了射极电阻负反馈和电阻并联反馈改善其带宽和线性度.仿真结果展示了其在通带范围内16.3 dB的增益和小于-10 dB的端口反射.此放大器噪声系数为2.8 dB左右,并使用5V电源电压.
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Key words
emitter degeneration,SiGe,broadband,S-band,resistive feedback,LNA
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