X-ray Penetration Depth for Large Lattice-Mismatched Heteroepitaxial Layer by Dynamical Diffraction Theory using Computer Simulation

Lattice-mismatched semiconductor heteroepitaxial layers give several hundred arcseconds in full width at half maximum (FWHM) of rocking curve of diffracted intensity in double-crystal diffractometry. A depth-sensitive X-ray scattering topograph of InAs layer grown by molecular beam epitaxy (MBE) on GaAs, proposed in an earlier publication [Jpn. J. Appl. Phys. 35 (1996)L1311], is confirmed by another technique, namely, asymmetric grazing incidence diffraction topography, and numerical simulation. Contrasts from a local displacement in the strain field of the matrix are different from that from diffraction indices. The surface contrast which was observed due to a local displacement in a deep region was not visible from a local displacement in a shallower region. These results are capable of explaining the previous scattering topography results.