Growth of nonpolar m-plane GaN (1 0 −1 0) single crystal on (1 0 0) LiAlO2 substrate by a newly designed hydride vapor phase epitaxy

A newly designed two-step reactor which places both chemical vapor deposition (CVD) and hydride vapor phase epitaxy (HVPE) in series is proposed to grow nonpolar m-plane GaN (10−10) material on a closely lattice-matched (100) LiAlO2 single crystal substrate. The surface morphologies are characterized by scanning electron microscopy. Structural properties of the GaN epilayers are investigated by X-ray diffraction, and the FWHM of GaN (10−10) rocking curve is around 0.13°. Optical and electrical properties are evaluated by photoluminescence spectroscopy, optical transmission spectra and Hall measurement. Photoluminescence spectroscopy exhibited a near band edge emission peak at 3.410eV. The carrier concentration is (3.9±0.01)×1018cm−3.