Large SET Duration Broadening in a Fully-Depleted SOI Technology—Mitigation With Body Contacts

V. Ferlet-Cavrois,D. Kobayashi,D. McMorrow,J. R. Schwank,H. Ikeda,A. Zadeh,O. Flament, K. Hirose

IEEE Transactions on Nuclear Science（2010）

引用 11|浏览14

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摘要

Significant floating body effects were measured in 0.2 μm fully-depleted SOI resulting in large amounts of single event transient (SET) broadening, i.e., SET duration stretching. The transient response of single transistors and the propagation of single-event transients (SET) in chains of logic gate (inverters and NOR gates) were investigated by using either heavy ion irradiation or focused laser ...

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关键词

Laboratories,Circuits,Optical propagation,Logic gates,Pulse inverters,Frequency,CMOS technology,Attenuation,Transient response,Optical pulses

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