High-power high-efficiency SiGe Ku- and Ka-band balanced frequency doublers
IEEE Transactions on Microwave Theory and Techniques（2005）
摘要
High-efficiency monolithic SiGe balanced frequency doublers have been developed for Ku- and Ka-band applications. A novel miniature second harmonic reflector is presented, and the impact of the parasitic inductor from emitter to ground is also explored to optimize the conversion efficiency of the doubler. The Ku-band design presents an output power of 5-6 dBm from 15.4-18 GHz for an input power of...
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关键词
Silicon germanium,Germanium silicon alloys,Frequency,Power generation,Voltage-controlled oscillators,HEMTs,MODFETs,Laboratories,MMICs,Computer science
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