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Gallium arsenide crystal growth from metallic solution under microgravity

Y Suzuki, S Kodama,O Ueda,O Ohtsuki

Advances in Space Research（1995）

Cited 3|Views2
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Abstract
Homogeneous and low-defect crystals are important to improving semiconductor devices. This paper reports the properties of GaAs crystals grown from a metallic solution under microgravity. Growth was free from convection caused by surface tension and by gravity. Our experiment was performed aboard the Second German Spacelab Mission D-2.
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Key words
surface tension,crystal growth,semiconductor devices,gallium arsenide
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