Demonstration of Schottky Barrier NMOS Transistors With Erbium Silicided Source/Drain and Silicon Nanowire Channel

We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2-x) in a Schottky source/drain back-gated architecture. Although the subthreshold swing (~180 mV/dec) and drain-induced barrier lowering (~500 mV/V) are high due thick BOX as gate oxide, the fabricated Schottky transistors show acceptable drive current ~900 muA/mum and high Ion/Ioff ratio (~105). This is attributed to the ...