A Monolithic 2.45ghz, 0.56w Power Amplifier With 45% Pae At 2.4v In Standard 25 Ghz Ftsi-Bipolar
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium （2002）
Abstract
A monolithic radio frequency power amplifier for 2-2.6 GHz has been realized in a standard 25 GHz-f(T) Si-bipolar production technology. The balanced 2-stage push-pull power amplifier uses two on-chip transformers as input-balun and for interstage matching and is operating at supply voltages as low as 1 V. A new type of microstrip line balun acts as output matching network. At 1 V, 2.4 V, 3 V supply voltages output powers of 19 dBm, 27.5 dBm, 29.1 dBm are achieved at 2.45 GHz. The respective power added efficiency is 38 %, 45 %, 46 %. The small-signal gain is 3 5 dB.
MoreTranslated text
Key words
MMIC power amplifiers,UHF integrated circuits,UHF power amplifiers,baluns,bipolar MMIC,bipolar analogue integrated circuits,elemental semiconductors,impedance matching,integrated circuit design,silicon,0.56 W,1 to 3 V,2 to 2.6 GHz,2.4 V,2.45 GHz,25 GHz,35 dB,38 to 46 percent,Si,Si bipolar production technology,balanced two-stage amplifier,input-balun,interstage matching,microstrip line balun,monolithic RF power amplifier,on-chip transformers,output matching network,push-pull power amplifier,radio frequency power amplifier
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined