A 5.2-GHz low-power low-noise amplifier using inGaP-GaAs HBT technology
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS(2005)
Abstract
A 5.2-GHz monolithic low-power low-noise amplifier (LNA) with a quasi-cascode configuration using InGaP-GaAs HBT technology is reported for the first nine. A state-of-the-art noise figure of 2.39 dB at 5.2 GHz is obtained among all bipolar LNAs with a fully on-chip input-matching network. The input return loss is -32 dB with a voltage gain of 27 dB at 5.2 GHz. An input 1-dB compression point (P-IdB) and an input 3(rd)-order intercept point (IIP3) of -14 and -5 dBm are also achieved, respectively. This circuit consumes only small dc power of 6 mW. (c) 2005 Wiley Periodicals, Inc.
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Key words
InGaP-GaAs,low-power consumption,low-noise amplifier,HBT
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