A Predictive Method of Crosstalk Peak Considering Packaging Parameters for SiC MOSFETs

Silicon carbide-based metal-oxide-semiconductor field effect transistor (SiC MOSFET) device has been widely applied due to its lower on-resistance and parasitic parameters compared with silicon (Si) device. However, unexpected crosstalk phenomenon occurs and could lead to false turn-on or gate-oxide damage of the devices. In this article, a predictive method of crosstalk peak is proposed to provide theoretical guidance for crosstalk suppression, which can improve the reliability of the systems. Firstly, the generation of crosstalk is illustrated. Secondly, the influence of packaging parameters on crosstalk prediction and measurement is discussed. Furthermore, an improved model considering packaging parameters is proposed to obtained accuracy crosstalk peak. Finally, the crosstalk peaks predicted by the proposed method are compared experimentally with the actual measured values. The results have verified the proposed method can achieve accurate crosstalk peak prediction.