Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS

HMDS has been compared to the silane/propane system for the homoepitaxy of 4H-SiC in the growth temperature range from 1450degreesC to 1600degreesC. It was found that HMDS leads to a growth rate as high as 7 mum/h but with a lower growth efficiency compared to silane/propane. The layers grown with HMDS have good properties (AFM roughness, impurities level) comparable to that obtained with the silane/propane system.