A 322 MHz Random-Cycle Embedded DRAM with High-Accuracy Sensing and TuningM Iida,N Kuroda,H Otsuka,M Hirose,Y Yamasaki,K Ohta,K Shimakawa,T Nakabayashi,H Yamauchi, T Sano,T Gyohten,M Maruta,A Yamazaki,F Morishita,K Dosaka,M Takeuchi,K ArimotoSan Francisco, CA（2005）引用 16|浏览12关键词DRAM,logic compatibility,low power,noise cancel,twisted bit-line,tuningAI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
