Low temperature magnetoresistance in corrugation gated wires
Czechoslovak Journal of Physics(1996)
摘要
In order to clarify the quantum interference effect in corrugation gated wires of GaAs/AlGaAs, we have studied the negative
magnetoresistance (NMR) peak and discussed localization effect of the electron wave in the wire. As the width decreases, the
NMR becomes to decrease linearly and the Lorentzian peak changes into a triangular shape. Because of the larger NMR peak by
one order than that in the single dot, it suggests that a certain trapping motion in a small area near the wire boundary is
related to the origin of the large NMR.
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关键词
Gate Voltage, Electron Wave, Gate Voltage Dependence, Quantum Interference Effect, Trapping Motion
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