Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD

In0.82Ga0.18As epilayers were grown by LP-MOCVD on InP (100) substrates with two-step growth method. It was analyzed that growth temperature of buffer layer exerted an influence on its crystalline quality and optical property, which were characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence. The experiments showed that the crystalline quality and the optical property of the In0.82Ga0.18As epilayers had close relation to the growth temperature of buffer layer and the optimum buffer's growth temperature was about 450°C.