Observation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: Temperature and V/III flux ratio dependences
Journal of Crystal Growth(2006)
Abstract
In0.8Al0.2Sb/InSb layers were grown under various growth temperature and V/III flux ratio conditions on semi-insulating (001)-oriented GaAs substrates by molecular beam epitaxy. The crystalline qualities of In0.8Al0.2Sb/InSb layers were improved by decreasing the V/III flux ratio at a fixed temperature (380°C) and increasing the growth temperature of the fixed V/III ratio (6). Dislocations were only observed in the In0.8Al0.2Sb/InSb layers grown at the optimal condition. On the other hand, many planar defects, including microtwins, were observed when the In0.8Al0.2Sb/InSb layers were grown in the Sb-rich condition. Specifically, V-shaped defects drawn boundaries in the microtwins were observed in the In0.8Al0.2Sb/InSb layer.
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72.80.Ey,68.37.Lp,68.35.Ct,61.72.Mm,And 61.72.Lk
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