Pulse-Annealing Study Of Photo-Stimulated Luminescence And Trapped-Hole States In Bafbr:Eu2+

Photo-stimulated luminescence (PSL) with F(Br-)-band light was studied with a pulse annealing technique in the X-rayed BaFBr and BaFBr:Eu2+ crystals. It was found that the PSL band due to Eu3+ centers in BaFBr:Eu2+ is kept unchanged for pulse annealing up to 280 K, though the one due to O- centers in BaFBr comes to disappear after pulse annealing around 200 K. This clearly indicates that Eu2+ ion plays an important role as the hole-trap in the image storage.