Model Verification For A High-Power-Efficiency Algaas-Gaas Hbt

Heterojunction bipolar transistors (HBT's) with 2700 mu m(2) of emitter area are characterized for model verification using an active load-pull measurement system. The simulation and measurement results (up to 26 dBm) are reported and compared in terms of output power level and power-added efficiency under variable operating conditions. These measurements are performed with the aim of designing power amplifiers for mobile communications.