Influence of doping on facet formation at the SiO2/Si interface

The effect of doping on the surface morphology of Si layers grown selectively inside the windows of SiO2-masked Si(001) substrates has been studied using atomic force microscopy and transmission electron microscopy. It is found that boron has a minimal influence on the surface morphology, while arsenic favours the creation of high-index facets at the expense of the (001) facet. (C) 1999 Elsevier Science B.V. All rights reserved.