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In掺杂ZnO透明导电薄膜光电性质的研究

Liang FANG,Li-ping PENG,Xiao-fei YANG,Yan-jiong LI,Chun-yang KONG

Semiconductor Optoelectronics（2009）

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Abstract
采用射频磁控溅射技术成功制备出无掺杂和In掺杂的ZnO透明导电薄膜.研究了In掺杂对薄膜的结构和光电性能的影响.结果表明,In掺杂有利于提高ZnO薄膜结晶度,使薄膜表面更加致密平整;由于In3+替代了Zn2+,提供了大量的剩余电子,使薄膜的导电性质得到了很大的提高,所得薄膜的最小电阻率为4.3×10-3Q·cm.制备的ZnO薄膜在可见光范围的透过率达到了85%,In的掺杂对透光率的影响不大.
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Key words
In-doped ZnO thin films,Magnetron sputtering,Optical and electrical properties,Transparent conductive
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