MgO-Based Tunnel Junction Material for High-Speed Toggle Magnetic Random Access Memory

R. W. Dave,G. Steiner,J. M. Slaughter,J. J. Sun,B. Craigo,S. Pietambaram,K. Smith,G. Grynkewich,M. DeHerrera,J. Akerman,S. Tehrani

IEEE Transactions on Magnetics（2006）

Cited 79|Views13

No score

Abstract

We report the first demonstration of a magnetoresistive random access memory (MRAM) circuit incorporating MgO-based magnetic tunnel junction (MTJ) material for higher performance. We compare our results to those of AlOx-based devices, and we discuss the MTJ process optimization and material changes that made the demonstration possible.We present data on key MTJ material attributes for different ox...

Translated text

Key words

Magnetic tunneling,Annealing,Junctions,Temperature measurement,Oxidation,Resistance,Sputtering

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined