Bias effects on structure of sputtered SiC films

SiC films were synthesized by magnetron sputtering at room temperature, by adjusting the negative bias voltage to the substrates. The cubic phase SiC (β-SiC) was probably formed even at the bias voltage of 0 V. The content of the β-SiC phase was increased by increasing the bias voltage, which is suggested to be due to a bias-assisted effect on the formation of the β-SiC phase.