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Interface properties of NO-annealed N/sub 2/O-grown oxynitride

P. T. Lai,J. P. Xu,Y. C. Cheng

IEEE Transactions on Electron Devices（1999）

Cited 43|Views2
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Abstract
The oxide/Si interface properties of gate dielectric prepared by annealing N/sub 2/O-grown oxide in an NO ambient are intensively investigated and compared to those of O/sub 2/-grown oxide with the same annealing conditions. Hot-carrier stressings show that the former has a harder oxide/Si interface and near-interface oxide than the latter. As confirmed by SIMS analysis, this is associated with a ...
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Silicon materials/devices
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