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A Low-Voltage Bulk-Drain-Driven Read Scheme For Sub-0.5 V 4 Mb 65 Nm Logic-Process Compatible Embedded Resistive Ram (Reram) Macro

Meng-Fan Chang,Che-Wei Wu,Chia-Cheng Kuo,Shin-Jang Shen,Sue-Meng Yang,Ku-Feng Lin,Wen-Chao Shen,Ya-Chin King,Chorng-Jung Lin,Yu-Der Chih

IEEE Journal of Solid-state Circuits（2013）

Cited 30|Views74
Key words
ReRAM,sense amplifier
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