65-nm CMOS, W-Band Receivers for Imaging Applications.

CICC(2007)

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摘要
Two 76-92 GHz receivers, featuring 3-stage cascode LNAs coupled through a transformer to a double-balanced Gilbert-cell mixer and differential DC-5GHz IF buffer, are reported in 65-nm general purpose (GP) CMOS technology. One receiver features a traditional LNA with series-series inductive feedback while the LNA of the second receiver employs a shunt-series, transformer-feedback cascode stage. Both receivers have a differential down-conversion gain of 12 dB, an input P-1dB of -13 dBm, and a double-sideband noise figure of 9-10 dB. They each occupy an area of 550 mu mx550 mu m and consume 94 mW. An LO-to-RF isolation of 60 to 59 dB was measured for LO signals in the 80-85 GHz range. The transformer-feedback provides a broader bandwidth input match, lower than -10 dB from 74 to 95 GHz.
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关键词
CMOS integrated circuits,circuit feedback,low noise amplifiers,millimetre wave receivers,3-stage cascode LNA,CMOS,LO-to-RF isolation,W-band receivers,differential DC IF buffer,double-balanced Gilbert-cell mixer,double-sideband noise figure,down-conversion gain,frequency 5 GHz,frequency 74 GHz to 95 GHz,frequency 76 GHz to 92 GHz,frequency 80 GHz to 85 GHz,imaging applications,noise figure 9 dB to 10 dB,power 94 mW,series-series inductive feedback,shunt-series transformer-feedback cascode stage
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