Tunable Variation Of The Electron Effective Mass And Exciton Radius In Hydrogenated Gaas1-Xnx

Magnetophotoluminescence measurements show that the electron effective mass and the exciton radius in hydrogen irradiated GaAs1-xNx vary continuously as a function of the hydrogen dose until they recover the values of N-free GaAs. First-principles calculations account for the experimental findings through the formation of a specific N-dihydrogen complex, which leads to the removal of the electron localization caused by N incorporation into GaAs.