射频磁控溅射工艺制备二氧化钒薄膜
Journal of Synthetic Crystals(2008)
Abstract
以V2O5陶瓷烧结靶材及射频磁控溅射工艺制备V2O5薄膜,再经氩气气氛退火处理得到VO2薄膜。采用扫描电子显微镜观察不同制备条件下薄膜表面微观形貌特征,拉曼光谱和X射线光电子能谱用来分析确定退火前后薄膜的物相结构及化合价态。结果表明,溅射4h、450℃退火2h制备的薄膜结晶形态良好,VO2纯度高于94%原子分数。
MoreTranslated text
Key words
Annealing,Preparation technology,RF magnetron sputtering,VO2 thin films
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined