High voltage output circuit using n- and n-LDMOSFET with thick gate oxide for PDP driver IC

Electronics Letters(2004)

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摘要
A novel high voltage output circuit with thick-gated LDMOSFETs is proposed to reduce the chip size and to improve the switching speed for the plasma display panels (PDP) driver IC. The chip size of the PDP driver IC using the proposed output circuit is reduced by 35% with a similar falling time compared with the conventional one. The falling time of the proposed output circuit is about 2.5 times f...
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关键词
plasma displays,MOS integrated circuits,power MOSFET,driver circuits,power integrated circuits
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