Study of 4H– and 6H–SiC films grown on off-oriented (0 0 0 1) SiC substrates

The morphological characteristics of homoepitaxially grown 6H–SiC and 4H–SiC films on off-oriented (0001) Si-terminated and (0001̄) C-terminated substrates were studied. The structure of extended triangular-like depressions and hexagonal pyramids, which are formed on the film surfaces, were characterized using transmission electron microscopy (TEM) and atomic force microscopy (AFM). The important role of the twins in the formation of the hexagonal pyramids was shown. The origin and the possible growth mechanism of the surface features are discussed.