Interband transition studies of one-side modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs asymmetric step quantum wells

The results of S–dH measurements and the observation of quantum Hall plateaus at 1.5K clearly demonstrated the existence of a 2DEG in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs asymmetric step quantum wells. The PL data measured at several temperatures showed that the excitonic transition from the ground electronic subband to the ground heavy-hole band (E0–HH1) shifted to the lower energy side with increasing temperature. The value of the (E0–HH1) excitonic transition obtained from the PL measurements was in reasonable agreement with that determined from self-consistent calculations.