Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal–Oxide–Silicon Capacitors

The flatband-voltage shift of metal-oxide-silicon capacitors is investigated under the application of low-level stress (up to 220 MPa of biaxial stress and 380 MPa of uniaxial stress) to different substrate orientations. We propose that the flatband-voltage shift be modeled as the net effect of silicon-band-edge shifts and modulation of the separation between the band edge and the Fermi level unde...