Long-Range Lateral Dopant Diffusion in Tungsten Silicide Layers
Semiconductor Manufacturing, IEEE Transactions（2009）
Abstract
Novel diode test structures have been manufactured to characterize long-range dopant diffusion in tungsten silicide layers. A tungsten silicide to p-type silicon contact has been characterized as a Schottky barrier rectifying contact with a silicide work function of 4.8 eV. Long-range diffusion of boron for an anneal at 900degC for 30 min has been shown to alter this contact to become ohmic. Long-range diffusion of phosphorus with a similar anneal alters the contact to become a bipolar n-p diode. Bipolar diode action is demonstrated experimentally for anneal schedules of 30 min at 900deg C, indicating long-range diffusion of phosphorus ( ~ 38 mum). SIMS analysis shows dopant redistribution is adversely affected by segregation to the silicide/oxide interface. The concept of conduit diffusion has been demonstrated experimentally for application in advanced bipolar transistor technology.
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Key words
temperature 900 degc,semiconductor doping,phosphorus,work function,semiconductor materials,boron,bipolar transistors,annealing,si-wsi:p,tungsten compounds,ohmic contacts,doping,secondary ion mass spectra,schottky barrier rectifying contact,bipolar transistor,long-range lateral dopant diffusion,schottky diodes,sims,rectification,bipolar n-p diode,diode test structures,diodes,time 30 min,si-wsi:b,diffusion processes,schottky barriers,segregation,tungsten,diffusion process,schottky barrier
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