Growth and characterization of diamond film on aluminum nitride

Diamond films have been fabricated on aluminum nitride (AlN) ceramics by hot filament (HFCVD) method. High nucleation density of more than 109/cm2 can be obtained on AlN wafers by the pre-irradiation of high temperature filament in the hydrogen atmosphere. Thermal properties of the composites were measured by using photothermal deflection techniques (PTD). Thermal diffusivity of diamond film/AlN depends on the quality and thickness of coated diamond films.