GaN Schottky Barrier Photodetectors

S. J. Chang,S. M. Wang,P. C. Chang,C. H. Kuo,S. J. Young,T. P. Chen,S. L. Wu,B. R. Huang

IEEE Sensors Journal（2010）

引用 12|浏览22

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摘要

We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D*) were 7.00 × 10-10 W and 2.26 × 109 cmHz0.5 W-...

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关键词

Gallium nitride,Schottky barriers,Photodetectors,Leakage current,Light emitting diodes,Fabrication,Semiconductor device noise,Substrates,Semiconductor materials,Educational technology

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