EFFECT OF HIGH TEMPERATURE-PRESSURE ON BURIED SILICON DIOXIDE IN SIMOX AND SOI STRUCTURES

The effect of annealing at 1520-1570 K under high pressure (HP, up to 1.2 GPa) on the structure of SiO2 in oxygen implanted silicon (Si:O) and in silicon with buried SiO2 layer (SOI) was investigated by TEM, X-Ray and FTIR methods. Depending on the implantation and treatment parameters, SiO2 precipitates or continuous SiO2 layers, sometimes with defects at the SiO2/Si boundary, are created. A stress dependent shift of asymmetric stretching vibration mode associated with Si-O bonds towards lower frequencies is detected for SiO2 in the HT-HP treated Si:O and SOI samples.