Modeling the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor
IEEE Transactions on Electron Devices（1999）
摘要
This paper compares the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor (HBT) to that of a silicon bipolar junction transistor (BJT) fabricated with identical geometry. Derived is an isothermal expression for the forward Early voltage specifically suited to the base composition of a SiGe HBT, The expression includes two fit factors, one for the Si1-xGex alloy and the other for the nonuniform doping density. The fit factors are functions of the device temperature and are determined through pulsed bias measurements.
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关键词
Ge-Si alloys,doping profiles,heterojunction bipolar transistors,semiconductor device models,semiconductor materials,Si1-xGex alloy,SiGe,SiGe HBT,device temperature,fit factors,forward Early voltage,heterojunction bipolar transistor,isothermal expression,modeling,nonuniform doping density,pulsed bias measurements,temperature-dependent Early voltage
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