Growth of amorphous SixC1−x thin films using a methane–silane high energy ion beam

Amorphous SixC1-x films, with x ranging from 0.30 to 0.70, were grown by high-energy ion beam deposition starting from a methane-silane gas mixture. XPS analysis of the samples shows that it is possible to incorporate silicon to the amorphous carbon matrix giving an Si/C ratio depending on the methane-silane gas mixture. Raman spectra of the thermally annealed films indicate that the silicon incorporation in a-C films increases their thermal stability. There is no evidence of a complete graphitization up to 900 degrees C, while in a-C samples graphitization occurs at about 500 degrees C. This result shows that thermal stability is a function of the film composition. (C) 1999 Elsevier Science S.A. All rights reserved.