Basic parameter measurement and channel broadening effect in the submicrometer MOSFET

K.-L. Peng,S.-Y. Oh,M. A. Afromowitz,J. L. Moll

IEEE Electron Device Letters（1984）

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摘要

An improved measurement technique of the basic MOSFET parameters is presented. This method is based on the measured data of two identical devices with different channel lengths. The effect of series resistance and channel length can be separated from the mobility measurement. This is the only method in which it has been proved that mobility can be measured on a short channel device. A new techniqu...

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关键词

MOSFET circuits,Electrical resistance measurement,Length measurement,Laboratories,Electric resistance,Threshold voltage,Contact resistance,Measurement techniques,FETs,Capacitance

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