Features of GaN growth attained by metal-organic vapor-phase epitaxy in a low-pressure reactor

The properties of GaN layers grown by metal-organic vapor-phase epitaxy on sapphire substrates at atmospheric and reduced pressures were studied. The surface morphology, crystalline, luminescence, and electric transport properties of these structures were comparatively analyzed. The depth profiles of elements were measured using secondary-ion mass spectrometry. The carrier distribution in heavily doped structures with p-n junctions was analyzed by electrochemical C–V profiling. It was shown that GaN layers grown in a low-pressure reactor feature improved structural, electric, and optical characteristics.