Erratum: “A Novel Body-Tied Fin Field Effect Transistor Flash Memory Structure with λ-Shaped Floating Gate for Sub 45 nm NOR Flash Memory”

A novel body tied (BT) tin field effect transistor (FinFET) flash structure with lambda-shaped floating gate was firstly demonstrated for sub 45 nm NOR flash memory. Using this structure. high on cell current and punch-through immunity with a good reliability have been achieved. In this structure, the neighboring cell interference has been effectively reduced, which makes it feasible to increase the coupling ratio of FinFET cells through raising the floating gate height. In addition. the random telegraph signals noise (RTN) and its impact on the threshold voltage (V-th) variation of flash cells have been intensively studied. It was found that RTN V-th variations in the lambda-shaped BT-FinFET cells are significantly Suppressed thanks to the increased active area and enhanced on current.