Integrated 1.2um Cmos Photodiodes, Transimpedance Amplifier, 12 Bits A/D Converter, And Dsp Interface For Microinstrument Applications

ISCAS (1)（1999）

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摘要

Integrated CMOS photodiodes, transimpedance amplifier and dual-slope ADC are designed and fabricated in 1.2um AMI ABN MOSIS process. The quantum efficiency of n-diffusion p-base junction photodiode with size 200um X 200um is 21.7%. The transimpedance amplifier uses T-feedback to realize large equivalent feedback resistance. The 12-bit dual-slope A/D converter with size 450um X 1950um, a integrating resistor of 273K, and an external capacitor of 1.5nF has conversion time from 0.41ms to 0.81ms when fclock=10MHz. The offset error is 5 LSB and the integral nonlinearity error is 0.4% of full scale. The chip derived from this project is successfully used in a novel microinstrument for heart rate and breathing rate monitor.

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关键词

analogue-digital conversion,biomedical electronics,computerised monitoring,mixed analogue-digital integrated circuits,photodiodes,0.41 to 0.81 ms,1.2 micron,10 MHz,12 bit,1950 micron,200 micron,21.7 percent,450 m,A/D converter,AMI ABN MOSIS process,CMOS photodiodes,DSP interface,T-feedback,breathing rate monitor,conversion time,dual-slope ADC,equivalent feedback resistance,heart rate monitor,integral nonlinearity error,microinstrument applications,n-diffusion p-base junction photodiode,offset error,quantum efficiency,transimpedance amplifier,

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