Isotope Shift In Semiconductors With Transition-Metal Impurities: Experiment And Theory Applied To Zno : Cu

PHYSICAL REVIEW B(1998)

Cited 28|Views3
No score
Abstract
Isotope shifts for various lines associated with excitations of transition-metal impurities in semiconductors are considered. Special attention is paid to ZnO:Cu, for which experimental results are presented. Isotope shifts are measured for the so-called photoluminescence alpha and beta zero-phonon lines associated with excitations of bound excitons, and of the zero-phonon line associated with the intracenter Cu2+(T-2(2)-E-2) transition. These shifts appear to be negative and nearly equal. A theoretical model explaining these results is proposed, which incorporates the mode softening mechanism and the covalent swelling of the impurity d electron wave functions. It is shown that, contrary to transitions in simple neutral impurities, this mechanism works both for the excited and ground states of all processes in transition-metal impurities considered here. Using reasonable values of the parameters of the system, we are able to explain both the sign and value of the isotope shifts. [S0163-1829(98)04115-0].
More
Translated text
Key words
transition metal,iron,ground state
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined