In situ temperature and distribution measurements of x-ray

For high throughput with X-ray lithography, a very sensitive X-ray resist, good X-ray transparency of the mask and high exposure power are required. This leads to a local temperature rise of the X-ray masks due to the absorbed power and, therefore, to mask distortions, resulting in pattern displacement. This paper presents theoretical calculations and experimental results on the temperature rise of X-ray masks as well as the resulting pattern displacement on the wafer.