Si基Ge外延薄膜材料发光性能研究进展
Semiconductor Optoelectronics（2011）
Abstract
理论和实验研究表明,在一定的应变和掺杂浓度下,Si基外延Ge薄膜能实现1.55μm光通信波段的直接带隙发光.讨论了Si基外延Ge材料的生长技术及其能带结构,结合本小组近年来在该领域所取得的成果,介绍了国内外各研究机构对Ge薄膜发光材料和器件的研究进展,展望了未来的发展趋势.
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Key words
light emitters,Ge epitaxy,strain,photoluminescence,doping
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