Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current technique
IEEE Transactions on Electron Devices(1998)
摘要
An oxide trap characterization technique by measuring a subthreshold current transient is developed. This technique consists of two alternating phases, an oxide charge detrapping phase and a subthreshold current measurement phase. An analytical model relating a subthreshold current transient to oxide charge tunnel detrapping is derived. By taking advantage of a large difference between interface t...
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关键词
Stress,Electron traps,Subthreshold current,Current measurement,Hot carriers,Charge measurement,Phase measurement,Analytical models,Transient analysis,Charge carrier processes
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