23.1: High Performance and High Stability PIN OLED

Sid Symposium Digest of Technical Papers(2006)

引用 3|浏览12
暂无评分
摘要
Innovative PIN OLED that use a new n-doped architecture have been investigated. Good initial performances as well as good lifetimes have been demonstrated. Thermal stability of these new diodes has been greatly improved by using a new system matrix+ n-dopant. As a result, RGB diodes can sustain at least a 500 h storage period-of-time at 90 °C with minor degradation. Preliminary studies at 110 °C for at least 24 h show also very promising features for such devices.
更多
查看译文
关键词
high stability pin,high performance
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要