The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

IEEE Transactions on Nuclear Science(2005)

Cited 153|Views42
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Abstract
Heavy ion irradiation was simulated using a Geant4 based Monte-Carlo transport code. Electronic and nuclear physics were used to generate statistical profiles of charge deposition in the sensitive volume of an SEU hardened SRAM. Simulation results show that materials external to the sensitive volume can affect the experimentally measured cross-section curve.
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Key words
Single event upset,Random access memory,Circuits,Nuclear electronics,Nuclear power generation,Ionization,Laboratories,Energy measurement,Discrete event simulation,Nuclear physics
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