Metalorganic vapor-phase epitaxy of room-temperature, low-threshold InGaAs/AlInAs quantum cascade lasers

We have grown 30-stage AlInAs-GaInAs quantum cascade laser structures by low-pressure metalorganic vapor-phase epitaxy (MOVPE). The growth rate for the active region was set very low (0.1nm/s), and growth stops were employed at all interfaces. The devices were operated pulsed at room temperature, with a threshold current density of 2.8kA/cm2, a lasing wavelength of 7.6μm, and a peak power of 150mW. CW operation was achieved up to a temperature of 180K. These characteristics compare favorably with MBE-grown QC lasers of similar structure.