Spectroscopic Ellipsometry Studies of Nanocrystalline Silicon in Thin-Film Silicon Dioxide

Nanocrystalline silicon (n-Si) is formed in a silicon dioxide thin-film matrix by ion implantation followed by thermal annealing in forming gas at 1100 °C for 1 hour. The ion implantation is performed using multiple implants with different implantation energies and doses to create a quasi-flat concentration of silicon atoms throughout the silicon dioxide film. These samples are then analyzed using spectroscopic ellipsometry to characterize their linear optical properties. Implantations with small doses (5 × 10 20 Si atoms/cm 3 ) increase the refractive index by a small amount (δn∼0.006 at 600nm), while implantations with moderate dose (5 × 10 21 Si atoms/cm 3 ) have a larger increase in refractive index and exhibit optical absorption above ∼1.9 eV (650 nm).